Metrology | Dr Tai-chin Lo Nanosystem Fabrication Facility, HKUST

1 Resolution
0.6 nm (Accelerating voltage 15 kV, WD*1 = 4 mm, Photo magnification x270,000)
0.7 nm (Accelerating voltage2 1 kV, WD1 = 1.5 mm, Photo magnification x200,000)
The resolution shall be measured on a resolution measurement specimen (Gold particle on carbon).
*1 WD (Working Distance)
*2 Deceleration mode
2 Magnification
High magnification mode	:	x100 to x2,000,000
Low magnification mode	:	x20 to x20,000
NOTE: The magnification range is varied depending on WD and accelerating voltage.
The magnification is stipulated at 127 mm x 95 mm of display size (Photo magnification).
3 Electron optics system
(1) Accelerating voltage (Vacc)	:	0.50 to 30.00 kV (0.01 kV steps)
(2) Landing voltage (Vland)	:	0.01 to 20.00 kV (0.01 kV steps)
(3) Decelerating voltage	:	Maximum -3.50 kV
(4) Detectors	:	Scintillator/Photo multiplier detector
		Upper detector (BXB filter detector)
		Lower detector (Chamber SE/BSE detectors)
4 Specimen Stage
(1) Drive method	:	5-axis motor drive
(2) Movable range	:	X-axis 0 to 110 mm
		Y-axis 0 to 110 mm
		Z-axis (WB) 1.5 to 40 mm
		R-axis (Rotation) 360° continuous
		T-axis (Tilt) -5° to 70°
(3) Maximum specimen size	:	100 mm diameter
(4) Maximum specimen height	:	36mm (Including the specimen holder and specimen stub)
(5) Specimen weight	:	Air lock method
(6) Specimen exchange	:	Control via GUI
(7) Control		SEM MAP function
		Postion memory function
		Eucentric rotation function
		Eucentric tilt function [Specimen height: 36 mm * Including the specimen holder]
		Rotation assist function

Magnification	:	10x-100,000x
Specimen Stage	:	X: 40 mm, Y: 35 mm, Rotation: 0-360 degree
Stage Control	:	Camera navigation System, 3 axes (X, Y, Rotation) computer controlled
Max. Sample Size	:	80 mm (dia.), 50 mm (thickness)
Vacuum Mode	:	HV, LV
Signal Detector	:	BSE detector, High-Sensitivity Low- Vacuum SE detector
Image Signal	:	BSE, SE or Mix (BSE + SE)
Image Adjustment	:	Auto start, Auto focus, Auto brightness, Camera
Image Data Saving	:	2,560 x 1,920, 1,289 x 960, 640 x 480 pixels
Image Format	:	BMP, TIFF, JPEG

Measurement of roughness, waviness, step height on a surface
Vertical Resolution	:	1 Å (Max. vertical range 13μm), 25 Å (Max vertical range 300μm)
Horizontal Resolution	:	0.01 μm at 1μm/s scan speed
Max. Scan Length	:	60 mm, 2-D scan only
Scan Speed	:	1 μm/s to 25 mm/s
Stylus Force	:	1-100 mg
Stylus Radius	:	12.5 μm
Display Magnification	:	60-240x

Measurement of roughness, waviness, step height on a surface
Vertical Resolution	:	1 Å (Max. vertical range 13μm), 25 Å (Max vertical range 300μm)
Horizontal Resolution	:	0.025 μm
Max. Scan Length	:	150 mm, 2-D scan only
Scan Speed	:	2 μm/s to 25 mm/s
Stylus Force	:	0.5-50 mg
Stylus Radius	:	2 μm
Display Magnification	:	60-240x

Range from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley 2400 source meter
Tungsten Carbide and Osmium probe heads
Tip radius	:	40.6 μm
Spring Pressure	:	85 grams

Film thickness measurement:
Silicon Dioxide, Silicon Nitride, Polysilicon, Amorphous Silicon, Positive/Negative Photoresist and etc.
Measurable films	:	up to 3 layers
Standard visible system with Lens in 10x magnification
Measuring light spot size	:	25 μm

Single film thickness measurement on silicon substrate:
Silicon Dioxide, Silicon Nitride, Polysilicon, Amorphous Silicon, Positive/Negative Photoresist and etc.
Standard visible system with Lens in 10x magnification
Measuring light spot size	:	25 μm

Measure the optical constants: refractive Index, extinction coefficients and film Thickness for different materials
Wavelength	:	370 nm to 1690 nm, ~ 580 wavelengths
All wavelengths are acquired simultaneously
Focused beam diameter in ~200 μm
Spectral resolution in 1.6 nm, 5 nm bandwidth
Test Base fixed angle of 66°, horizontal sample stage for 100 mm wafer
Automated z-height alignment

Non-contact AFM imaging to investigate and analyze a sample surface
Supports up to 6" wafer
100 µm × 100 µm XY scan range
Up to 12 µm Z scan range
Radius of probe tip size, 10 nm
Enhanced acoustic enclosure
Fully motorized XY stage travels entire 150 mm × 150 mm

Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
Measure 1-D stress and produce 3-D topographical profile
For wafer flatness and Pattern measurement
Various of stress constant
Wafer size	:	2" to 8"
Thickness limit	:	less than 11 mm
Statistical process control and spreadsheet compatibility
Automatic segmentation calculation

Keyence VK-X260K 3D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any material.
Light source	:	408nm violet laser source White light source
Total magnification	:	Up to 28000x
Optical microscope	:	Pinhole confocal optical system 4 Objectives (10X, 20X, 50X & 150X)
Light receiving element	:	16-bit photomultiplier
Scanning method	:	Automatic upper/lower limit setting High-speed light intensity optimization (AAGII) Poor reflected light intensity supplement (Double Scan)
Stage	:	Manual XY Stage 70mm×70mm Micrometric motorized Z translation
Resolution	:	1nm lateral resolution 0.5nm Z-axis movement of objective lenses
Observation image	:	Super-high-resolution color CCD image 16-bit laser color confocal image Confocal + ND filter optical system C-laser differential interference image
Sample size	:	Up to 5" Maximum sample height 28mm

Probing Stage:
Sample size	:	Up to 152.4 mm (6 inch)
Probe:
Probe Tip Holder	:	Triaxle cable Current leakage: <50 fA
Probe Tip diameter	:	20 μm
Stereo Microscope:
Optical Magnification	:	20X – 400X
Keysight B1500A Semiconductor Device Parameter Analyzer:
Current-Voltage (IV) measurement with 4 HRSMUs (High Resolution Source Monitor Units)
Current range	:	± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
Voltage range	:	± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV