Dry Etching and Sputtering Module
Poly Etcher (DRY-Poly)
Clean/Semi-clean
Specifications
| Remark | : | For Semi-Clean process, please contact NFF (CWB) technicians. |
|---|---|---|
| Gases available | : | HBr, Cl2, O2, N2, He & Ar |
| RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
| Electrode coolant system | : | 20 oC |
| High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4” single wafer |
| Polysilicon etch | ||
| Minimum line/space | : | 0.5 µm |
| Low rate polysilicon etch E/R | : | ~ 900 Ȧ/min |
| Selectivity to oxide | : | 13:1 |
| Selectivity to photoresist | : | 12.5:1 |
| Uniformity | : | 5% |
| Normal rate polysilicon etch | ||
| E/R | : | >1800 Ȧ/min |
| Selectivity to photoresist | : | 2.5:1 |
| Uniformity | : | 5% |
GaN Etcher (DRY-GaN)
Non-Standard
Specifications
| Gases available | : | BCl3, Cl2, CH4, SF6, O2, He & Ar |
|---|---|---|
| RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
| Electrode coolant system | : | 5 to 30 oC |
| High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 2", 4" or 6” single wafer or specimens |
| GaN etch | ||
| E/R | : | ~5000 Ȧ/min |
| Selectivity to oxide | : | 10:1 |
| Sapphire etch | ||
| E/R | : | ~700 Ȧ/min |
| Selectivity to oxide | : | 1.5:1 |
DRIE Etcher #1 (DRY-Si-1)
Clean
Specifications
| Gases available | : | C4F8, SF6, O2, N2, He & Ar |
|---|---|---|
| RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
| Electrode coolant system | : | 5 to 30 oC |
| High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" wafer |
| Silicon etch | ||
| Minimum Line/Space | : | 0.5 µm |
| Low Rate Silicon Etch E/R | : | From 500 Ȧ/cycle |
| Normal Rate Silicon Etch E/R | : | Up to 2 µm/min |
| Selectivity to Photoresist | : | >50:1 |
| Selectivity to Oxide | : | >80:1 |
| Uniformity | : | 7% |
DRIE Etcher #2 (DRY-Si-2)
Clean/Semi-clean
Specifications
| Gases available | : | C4F8, SF6, O2, N2, He & Ar |
|---|---|---|
| RF power source | : | 1x 3600W(max) at 13.56MHz for Primary Source 1x 3000W(max) at 13.56MHz for Secondary Source 1x 200W(max) at 13.56MHz for Platen electrode 1x 200W(max) at 300-500kHz for Platen electrode |
| Electrode coolant system | : | -20 to 40 oC |
| High speed turbo molecular pump | : | pumping speed of 2350 L/s at 25000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" wafer |
| Silicon etch | ||
| Minimum Line/Space | : | 0.5 µm |
| Aspect Ratio | : | Up to 60:1 |
| Low Rate Silicon Etch E/R | : | From 0.7µm/min (700 Ȧ/Loop) |
| Normal Rate Silicon Etch E/R | : | 2 µm/min |
| Fast Rate Silicon Etch E/R | : | 18 µm/min |
| Selectivity to Photoresist | : | From 12:1 to 250:1 |
| Selectivity to Oxide | : | From 24:1 to 500:1 |
| Uniformity | : | <5% |
DRIE Etcher #3 (DRY-Si-3)
Non-standard
Specifications
| Gases available | : | C4F8, SF6, O2, N2, He & Ar |
|---|---|---|
| RF power source | : | 1 x 1000W(max) at 13.56MHz for Coil electrode, 1 x 300W(max) at 13.56MHz for Platen electrode |
| Electrode coolant system | : | 20 oC |
| High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" wafer |
| Silicon etch | ||
| Minimum Line/Space | : | 1 µm |
| Low Rate Silicon Etch E/R | : | 1 µm/min |
| Normal Rate Silicon Etch E/R | : | Up to 2 µm/min |
| Selectivity to Photoresist | : | >50:1 |
| Selectivity to Oxide | : | >100:1 |
| Uniformity | : | 7% |
AOE Etcher (DRY-AOE)
Clean
Specifications
| Gases available | : | C4F8, CF4, CHF3, O2, N2, H2, He & Ar |
|---|---|---|
| RF power source | : | 1 x 3000W(max) at 13.56MHz for Coil electrode, 1 x 600W(max) at 13.56MHz for Platen electrode |
| Electrode coolant system | : | -5 to 30 oC |
| High speed turbo molecular pump | : | pumping speed of 2000 L/s at 48000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" single silicon or quartz wafer |
| Silicon Oxide etch | ||
| Minimum Line/Space | : | 0.5 µm |
| Silicon Oxide Etch E/R | : | AOE_PRD = 2300 Ȧ/min; AOE_PRB = 3000 Ȧ/min |
| Selectivity to Photoresist | : | >4:1 |
| Selectivity to Polysilicon | : | >15:1 |
| Uniformity | : | 7.5% |
Oxford Oxide Etcher (DRY-Oxide)
Non-Standard
Specifications
| Gases available | : | C4F8, CF4, CHF3, SF6, H2, O2, He, Ar, N2 |
|---|---|---|
| RF power source | : | 1 x 3000W(max) at 13.56MHz for coil electrode 1 x 600W(max) at 13.56MHz for platen electrode |
| Electrode coolant system | : | 5 to 60 oC |
| High speed turbo molecular pump | : | pumping speed of 1280 L/s at 39000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" or 6" single full wafer |
| Silicon Dioxide Etch (C4F8/H2/He) | ||
| E/R | : | ~ 2000 Ȧ/min (PR mask) |
| E/R | : | ~ 3500 Ȧ/min (Poly-Si mask) |
| Selectivity to Photoresist | : | ~ 4:1 |
| Selectivity to Poly-Silicon | : | ~ 8:1 |
| Silicon Nitride Etch (C4F8/H2/He) | ||
| E/R | : | ~ 3000 Ȧ/min (PR mask) |
| Selectivity to Photoresist | : | ~ 6:1 |
| Silicon Etch (SF6/C4F8) | ||
| E/R | : | ~ 3500 Ȧ/min (SiO2 mask) |
| Selectivity to Photoresist | : | ~ 8:1 |
| Remark: | : | Accept Cr mask; not for etching metals. |
IPC 3000 Asher #1, #2 and #4 (DRY-PR-2, DRY-PR-3 and DRY-PR-5)
Clean/Semi-clean/Non-standard
Specifications
| Gases available | : | O2 & N2 |
|---|---|---|
| RF power source | : | 400W(max) at 13.56MHz |
| Substrate size | : | 2", 4"and 6" wafers or specimens |
IPC 3000 Asher #3 (DRY-PR-4)
Non-Standard
Specifications
| Gases available | : | O2 & N2 |
|---|---|---|
| RF power source | : | 400W(max) at 13.56MHz |
| Substrate size | : | 2", 4" and 6" wafers or specimens |
Oxford RIE Etcher (DRY-RIE-1)
Non-Standard
Specifications
| Gases available | : | CHF3, SF6, O2, CF4, Ar, N2, He & H2 |
|---|---|---|
| RF power source | : | 500W at 13.56MHz |
| Huber electrode coolant system | : | -40 to 200 oC |
| Substrate size | : | 4", up to 3 wafers per run or specimen |
| Silicon Dioxide Etch | ||
| E/R | : | ~363 Ȧ/min for LTO |
| E/R | : | ~352 Ȧ/min for thermal oxide |
| Selectivity to photoresist | : | 2.6:1 |
| Selectivity to Silicon Nitride | : | 0.8:1 |
| Selectivity to Silicon | : | 6.7:1 |
| Uniformity | : | 3.6% |
| Silicon Nitride Etch | ||
| E/R | : | ~810 Ȧ/min |
| Selectivity to photoresist | : | 1.5:1 |
| Selectivity to Silicon Dioxide | : | 2.1:1 |
| Selectivity to Silicon | : | 5.4:1 |
| Uniformity | : | 5.8% |
AST Metal Etcher (DRY-Metal-1)
Semi-clean
Specifications
| Chlorine & Fluorine based barrel type system for etching aluminum | ||
|---|---|---|
| Gases available | : | Cl2, BCl3, CF4, CHF3, He, Ar, O2 & N2 |
| RF power source | : | 1000W(max) at 13.56MHz |
| Bias power source | : | 1000W(max) at 13.56MHz |
| Substrate size | : | 4" wafers |
| Aluminum Etch | ||
| Al etch rate | : | 1700 Ȧ/min |
| PR etch rate | : | 1000 Ȧ/min |
| SiOx etch rate | : | 300 Ȧ/min |
Memsstar XeF2 Silicon Etcher (DRY-XeF2-2)
Clean/Semi-clean
Specifications
| Gas available | : | XeF2 |
|---|---|---|
| Substrate size | : | 2", 4" single wafer or specimens |
| Silicon or Germanium Etch | ||
| Mask used | : | Photoresist, Oxide or Si3N4 |
| Etch rate with bright field mask | : | ~900 Ȧ/min |
Trion RIE Etcher (DRY-Trion)
Semi-clean
Specifications
| Gases available | : | CHF3, SF6, O2, CF4, Ar, N2, He and H2 |
|---|---|---|
| ICP power source | : | 600W (max) at 13.56MHz |
| RF power source | : | 600W (max) at 13.56MHz |
| Electrode coolant system | : | 0 to 30 oC |
| Substrate size | : | 4", up to 3 wafers per run or specimens |
| Silicon Dioxide Etch | : | ~500 Ȧ/min |
| Silicon Nitride Etch | : | ~850 Ȧ/min |
Oxford Aluminum Etcher (DRY-Metal-2)
Semi-clean
Specifications
| Gases available | : | Cl2, BCl3, HBr, CF4, SF6, O2 and Ar |
|---|---|---|
| RF power source | : | 1 x 3000W (max) at 13.56MHz for coil electrode |
| : | 1 x 300W (max) at 13.56MHz for platen electrode | |
| Electrode coolant system | : | 5 to 60 oC |
| High speed turbo molecular pump | : | pumping speed of 1250 L/s at 37800 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" wafer |
| Aluminum / Aluminum-Si etch | ||
| Minimum line / space | : | 0.5 µm |
| High rate Aluminum etch E/R | : | 3000 Ȧ/min |
| Normal rate Aluminum etch E/R | : | 1800 Ȧ/min |
| Selectivity to Photoresist | : | > 2:1 |
| Selectivity to Oxide | : | > 10:1 |
| Uniformity | : | 5% (etch from edge to center) |
NFF RIE Etcher (DRY-RIE-2)
Clean/Semi-clean
Specifications
| Gases available | : | CF4, CHF3, SF6 and O2 |
|---|---|---|
| RF power | : | 120W |
| Chiller temperature | : | 20 oC |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 4" wafer |
| Nitride etch rate | : | ~500 Ȧ/min |
| Oxide etch rate | : | ~460 Ȧ/min |
| Si etch rate | : | ~50 to 470 Ȧ/min |
| Photoresist etch rate | : | ~151 to 400 Ȧ/min |
Oxford GaN-InP Etcher (DRY-GaN-2)
Semi-clean
Specifications
| Gases available | : | Cl2, BCl3, CH4, H2, N2, SF6, O2, He and Ar |
|---|---|---|
| RF power source | : | 1 x 3000W (max) at 13.56MHz for coil electrode |
| : | 1 x 600W (max) at 13.56MHz for platen electrode | |
| Electrode coolant system | : | -10 to 200 oC |
| High speed turbo molecular pump | : | pumping speed of 1280 L/s at 39000 rpm |
| Fully automatic loadlock transfer system | ||
| Substrate size | : | 2", 4" or 6" single full wafer |
| GaN Etch | ||
| E/R: | : | ~6000 Ȧ/min |
| Selectivity to Oxide | : | 9:1 |
| InP Etch | ||
| E/R: | : | ~6000 Ȧ/min |
| Selectivity to Oxide | : | 10:1 |
Critical Point Dryer (CPD-1)
Semi-clean
Specifications
| Tousmis Automegasamdri®-915B, Series B Critical Point Dryer | ||
|---|---|---|
• Automatic Supercritical Point Dryer |
||
• All internal surfaces are inert to CO2 and ultra pure alcohols |
||
• 0.08µm internal filtration system delivers clean filtered LCO2 to process chamber |
||
• Small samples up to 6" wafer |
||
• Up to five wafers per single process |
||
Diener Plasma Cleaner (DRY-Cleaner) (Microfluidic user only)
Non-Standard
Specifications
• Gases available: air |
||
|---|---|---|
• RF power source: 50 W (max) at 13.56 MHz |
||
• Substrate size: 2", 4" or specimens |
||
Varian 3180 Sputterer (SPT-3180)
Semi-clean
Specifications
| Gases available | : | Ar & N2 |
|---|---|---|
| DC sputtering power source | : | 3 x 12KW |
| RF back sputtering power source | : | 600W at 13.56MHz |
| Fully automatic wafer handling system | ||
| Substrate size | : | 4" wafer |
| Chamber pressure | : | 5 x 10-7 torr |
| Target available | : | Mo, Pure Al, Al-Si & Ti (Installation of target might be needed. For details, please contact NFF (CWB) staff.) |
| Sputtering rate ( Ȧ/sec) | ||
~160 Ȧ/sec for pure Al |
||
~180 Ȧ/sec for Al/Si (1%) |
||
~40 Ȧ/sec for Ti |
||
~160 Ȧ/sec for Mo |
||
No Photoresist on wafer is allowed |
||
CVC-601 Sputterer (SPT-CVC)
Non-Standard
Specifications
| Gases available | : | Ar & N2 |
|---|---|---|
| DC sputtering power source | : | 1 x 3 KW |
| RF sputtering power source | : | 1200W at 13.56MHz |
| Chamber pressure | : | 5 x 10-7 torr |
| Substrate size | : | 2", 4"& 6" wafers or 4" square glass substrate |
| Target available | : | Cu, TiW & Au |
| Target available on request | : | Ti, Cr & Al-Si |
| Sputtering rate (Ȧ/min): | ||
~500 Ȧ/min for Al-Si |
||
~175 Ȧ/min for TiW |
||
~160 Ȧ/min for Au |
||
~1000 Ȧ/min for Cu |
||
No Photoresist on wafer is allowed |
||
ARC-12M Sputterer (SPT-ARC)
Non-Standard
Specifications
| Gases available | : | Ar, O2 & N2 |
|---|---|---|
| DC sputtering power source | : | 2 x 250W |
| RF sputtering power source | : | 600W at 13.56MHz |
| Chamber pressure | : | 1.5 x 10-5 torr |
| Substrate size | : | 2", 4" wafer or square glass, or specimens |
| Target available | : | Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, Ti, TiW, Ni |
NFF-CY1 Sputterer (SPT-CY1)
Semi-Clean
Specifications
| Gases available | : | Ar, O2 & N2 |
|---|---|---|
| DC sputtering power source | : | 1 x 100W |
| RF sputtering power source | : | 1 x 100W |
| Chamber pressure | : | 5 x 10-6 torr |
| Substrate size | : | 2", 4" wafer or square glass, or specimens |
| Target available | : | Al, Ti, Cr, Al-Si, Ni, Mo, dielectric targets (such as TiN, TaN) |
Cooke Evaporator #1 (SPT-EV1)
Semi-clean (SPT-EV1)
Specifications
| Gases available | : | N2 |
|---|---|---|
| E-beam power source | : | 1x 3KW |
| Chamber pressure | : | 8 x 10-7 torr |
| Substrate size | : | 2" or 4" wafers |
| Source available (in Phase II) | : | Al, Ni, Mo, Ti, Cr | No Photoresist on wafer is allowed for the Cook Evaporation System |
Cooke Evaporator #2 (SPT-EV2)
Non-Standard(SPT-EV2)
Specifications
| Gases available | : | N2 |
|---|---|---|
| E-beam power source | : | 1x 3KW |
| Chamber pressure | : | 8 x 10-7 torr |
| Substrate size | : | 2" or 4" wafers |
| Source available (in Phase III) | : | Al, Ni, Ti, Au, Cr, Pt, Fe, SiO2, Ag |
No Photoresist on wafer is allowed for the Cook Evaporation System |
||
AST 600EI Evaporator (SPT-AST600)
Non-Standard
Specifications
| Gases available | : | O2 and N2 |
|---|---|---|
| E-beam power source | : | 2 x 6KW |
| Chamber pressure | : | 9 x 10-8 torr |
| Substrate size | : | 2" and 4" wafers or specimens |
| Source available | : | Al, Au, Ti, Ni, Cr, Ge, Pt, Ag, ITO |
AST 450I Evaporator (SPT-AST450)
Non-Standard
Specifications
| Gases available | : | N2 |
|---|---|---|
| DC sputtering power source | : | 1 x 3KW |
| Chamber pressure | : | 9 x 10-8 torr |
| Substrate size | : | 2” wafer or specimens |
| Source available | : | Al, Ti, Au & Ni |
Edward Sputterer (Au) for SEM
Non-Standard
Specifications
| Gases available | : | Ar |
|---|---|---|
| RF power source | : | 100W at 13.56 MHz |
| Chamber pressure | : | 1 x 10-3 torr |
| Substrate size | : | 2" and 4" wafers or square glass, or specimens |
| Target available | : | Au (For SEM only) |